Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn 3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the D0X line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal 4T1→6A1 transition of Mn 2+ (3d5), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition 4T2 → defect state.
|Number of pages||6|
|Journal||Chemistry of Materials|
|Publication status||Published - 2005 Nov 1|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Chemistry