Synthesis and characterization of titania films on Mo(1 1 0)

X. Lai; Q. Guo; B. K. Min; D. W. Goodman

doi:10.1016/S0039-6028(01)01094-9

Synthesis and characterization of titania films on Mo(1 1 0)

X. Lai, Q. Guo, B. K. Min, D. W. Goodman

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Ultra-thin titania films were grown on a Mo(1 1 0) substrate by vapor depositing Ti in an O₂ ambient (5 × 10^-7 Torr) at 600 K, followed by annealing to 900-1200 K. X-ray photoelectron spectroscopy showed that titanium oxide films annealed to 900 K were partially reduced, exhibiting Ti⁴⁺, Ti³⁺ and Ti²⁺ species, whereas films annealed to 1200 K were fully oxidized and exhibited only Ti⁴⁺. Corresponding scanning tunneling microscopy measurements revealed layer-by-layer growth of titania films on Mo(1 1 0) at 900 K. Flat terraces with three different orientations were observed. The line spacings between the neighboring atomic rows for all terraces were ∼6.5 Å, suggesting epitaxial growth of TiO₂(1 1 0)-(1 × 1). A further anneal of the films to 1200 K led to three-dimensional, rough surfaces for the fully oxidized films, indicating the formation of stable crystallites at high temperature.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Surface Science
Volume	487
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(01)01094-9
Publication status	Published - 2001 Jul 20
Externally published	Yes

Bibliographical note

Funding Information:
We acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences and the Robert A. Welch Foundation. We thank Charles C. Chusuei for his comments and discussion.

Keywords

Growth
Molybdenum
Scanning tunneling microscopy
Titanium oxide
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(01)01094-9

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title = "Synthesis and characterization of titania films on Mo(1 1 0)",

abstract = "Ultra-thin titania films were grown on a Mo(1 1 0) substrate by vapor depositing Ti in an O2 ambient (5 × 10-7 Torr) at 600 K, followed by annealing to 900-1200 K. X-ray photoelectron spectroscopy showed that titanium oxide films annealed to 900 K were partially reduced, exhibiting Ti4+, Ti3+ and Ti2+ species, whereas films annealed to 1200 K were fully oxidized and exhibited only Ti4+. Corresponding scanning tunneling microscopy measurements revealed layer-by-layer growth of titania films on Mo(1 1 0) at 900 K. Flat terraces with three different orientations were observed. The line spacings between the neighboring atomic rows for all terraces were ∼6.5 {\AA}, suggesting epitaxial growth of TiO2(1 1 0)-(1 × 1). A further anneal of the films to 1200 K led to three-dimensional, rough surfaces for the fully oxidized films, indicating the formation of stable crystallites at high temperature.",

keywords = "Growth, Molybdenum, Scanning tunneling microscopy, Titanium oxide, X-ray photoelectron spectroscopy",

author = "X. Lai and Q. Guo and Min, {B. K.} and Goodman, {D. W.}",

note = "Funding Information: We acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences and the Robert A. Welch Foundation. We thank Charles C. Chusuei for his comments and discussion. ",

year = "2001",

month = jul,

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doi = "10.1016/S0039-6028(01)01094-9",

language = "English",

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TY - JOUR

T1 - Synthesis and characterization of titania films on Mo(1 1 0)

AU - Lai, X.

AU - Guo, Q.

AU - Min, B. K.

AU - Goodman, D. W.

N1 - Funding Information: We acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences and the Robert A. Welch Foundation. We thank Charles C. Chusuei for his comments and discussion.

PY - 2001/7/20

Y1 - 2001/7/20

N2 - Ultra-thin titania films were grown on a Mo(1 1 0) substrate by vapor depositing Ti in an O2 ambient (5 × 10-7 Torr) at 600 K, followed by annealing to 900-1200 K. X-ray photoelectron spectroscopy showed that titanium oxide films annealed to 900 K were partially reduced, exhibiting Ti4+, Ti3+ and Ti2+ species, whereas films annealed to 1200 K were fully oxidized and exhibited only Ti4+. Corresponding scanning tunneling microscopy measurements revealed layer-by-layer growth of titania films on Mo(1 1 0) at 900 K. Flat terraces with three different orientations were observed. The line spacings between the neighboring atomic rows for all terraces were ∼6.5 Å, suggesting epitaxial growth of TiO2(1 1 0)-(1 × 1). A further anneal of the films to 1200 K led to three-dimensional, rough surfaces for the fully oxidized films, indicating the formation of stable crystallites at high temperature.

AB - Ultra-thin titania films were grown on a Mo(1 1 0) substrate by vapor depositing Ti in an O2 ambient (5 × 10-7 Torr) at 600 K, followed by annealing to 900-1200 K. X-ray photoelectron spectroscopy showed that titanium oxide films annealed to 900 K were partially reduced, exhibiting Ti4+, Ti3+ and Ti2+ species, whereas films annealed to 1200 K were fully oxidized and exhibited only Ti4+. Corresponding scanning tunneling microscopy measurements revealed layer-by-layer growth of titania films on Mo(1 1 0) at 900 K. Flat terraces with three different orientations were observed. The line spacings between the neighboring atomic rows for all terraces were ∼6.5 Å, suggesting epitaxial growth of TiO2(1 1 0)-(1 × 1). A further anneal of the films to 1200 K led to three-dimensional, rough surfaces for the fully oxidized films, indicating the formation of stable crystallites at high temperature.

KW - Growth

KW - Molybdenum

KW - Scanning tunneling microscopy

KW - Titanium oxide

KW - X-ray photoelectron spectroscopy

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DO - 10.1016/S0039-6028(01)01094-9

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AN - SCOPUS:0035919908

SN - 0039-6028

VL - 487

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JO - Surface Science

JF - Surface Science

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ER -

Synthesis and characterization of titania films on Mo(1 1 0)

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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