Abstract
Ultra-thin titania films were grown on a Mo(1 1 0) substrate by vapor depositing Ti in an O2 ambient (5 × 10-7 Torr) at 600 K, followed by annealing to 900-1200 K. X-ray photoelectron spectroscopy showed that titanium oxide films annealed to 900 K were partially reduced, exhibiting Ti4+, Ti3+ and Ti2+ species, whereas films annealed to 1200 K were fully oxidized and exhibited only Ti4+. Corresponding scanning tunneling microscopy measurements revealed layer-by-layer growth of titania films on Mo(1 1 0) at 900 K. Flat terraces with three different orientations were observed. The line spacings between the neighboring atomic rows for all terraces were ∼6.5 Å, suggesting epitaxial growth of TiO2(1 1 0)-(1 × 1). A further anneal of the films to 1200 K led to three-dimensional, rough surfaces for the fully oxidized films, indicating the formation of stable crystallites at high temperature.
Original language | English |
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Pages (from-to) | 1-8 |
Number of pages | 8 |
Journal | Surface Science |
Volume | 487 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2001 Jul 20 |
Externally published | Yes |
Keywords
- Growth
- Molybdenum
- Scanning tunneling microscopy
- Titanium oxide
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry