TY - JOUR
T1 - Synthesis and electrical characteristics of Ag2S nanocrystals
AU - Jang, Jaewon
AU - Cho, Kyoungah
AU - Lee, Sang Heon
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2006-13), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (M10500000045-06J0000-04510).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/3/31
Y1 - 2008/3/31
N2 - In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.
AB - In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.
KW - Electrical properties
KW - Semiconductors
KW - Silver sulfide
UR - http://www.scopus.com/inward/record.url?scp=38149036493&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38149036493&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2007.08.080
DO - 10.1016/j.matlet.2007.08.080
M3 - Article
AN - SCOPUS:38149036493
SN - 0167-577X
VL - 62
SP - 1438
EP - 1440
JO - Materials Letters
JF - Materials Letters
IS - 8-9
ER -