In this paper, Ag2S nanocrystals were synthesized by the colloidal method at room temperature. The synthesized Ag2S nanocrystals were spherical in shape with a diameter of about 10-20 nm and high crystallinity, which were confirmed by the high resolution transmission electron microscope images and selected-area electron diffraction patterns. In order to investigate the electrical properties of the Ag2S nanocrystals, a back-gate thin film transistor (TFT) device structure was fabricated on SiO2/Si substrates. The drain current of TFT composed of Ag2S was increased according to the increase in the voltages of drain-source and gate, revealing n-type semiconductor properties. The phase of the Ag2S nanocrystals, which is related to their electrical properties, was proved to be α-phase by thermo-gravimetric analysis, differential thermal analysis, and X-ray diffraction.
Bibliographical noteFunding Information:
This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development (10022965-2006-13), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (M10500000045-06J0000-04510).
Copyright 2008 Elsevier B.V., All rights reserved.
- Electrical properties
- Silver sulfide
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering