Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate

Xing Hua Ma; Sang Hyo Kweon; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Young Sik Kim

doi:10.1016/j.jeurceramsoc.2016.08.037

Synthesis and microwave dielectric properties of Bi₂Ge₃O₉ ceramics for application as advanced ceramic substrate

Xing Hua Ma, Sang Hyo Kweon, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Young Sik Kim

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

During the synthesis of Bi₂Ge₃O₉ ceramics using Bi₂O₃ + 3GeO₂ powders, the Bi₄Ge₃O₁₂ phase was formed at low temperature (≤800 °C). Bi₄Ge₃O₁₂ preferentially adopted GeO₂-excess phase, and this phase was consistently present in the sintered Bi₂Ge₃O₉ ceramic as a secondary phase. Therefore, Bi₄Ge₃O₁₂ powder was first calcined and subsequently reacted with GeO₂ powder to obtain the pure Bi₂Ge₃O₉ ceramic through the following reaction: 1/2Bi₄Ge₃O₁₂ + 3/2GeO₂ → Bi₂Ge₃O₉Formation of the Bi₂Ge₃O₉ phase was initiated at temperature of 850 °C. The pure Bi₂Ge₃O₉ ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi₂Ge₃O₉ ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: ε_r = 9.7, Q × f = 48,573 GHz and τ_f = −29.5 ppm/°C.

Original language	English
Pages (from-to)	605-610
Number of pages	6
Journal	Journal of the European Ceramic Society
Volume	37
Issue number	2
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2016.08.037
Publication status	Published - 2017 Feb 1

Bibliographical note

Funding Information:
We would like to acknowledge the financial support from the R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning) and NST (National Research Council of Science & Technology) of Republic Korea (Grant CAP-13-02-ETRI).

Keywords

Advanced ceramic substrates
BiGeO ceramics
LTCC
Microwave dielectric properties

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1016/j.jeurceramsoc.2016.08.037

Cite this

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title = "Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate",

abstract = "During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.",

keywords = "Advanced ceramic substrates, BiGeO ceramics, LTCC, Microwave dielectric properties",

author = "Ma, {Xing Hua} and Kweon, {Sang Hyo} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Young Sik}",

note = "Funding Information: We would like to acknowledge the financial support from the R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning) and NST (National Research Council of Science & Technology) of Republic Korea (Grant CAP-13-02-ETRI). ",

year = "2017",

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doi = "10.1016/j.jeurceramsoc.2016.08.037",

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pages = "605--610",

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T1 - Synthesis and microwave dielectric properties of Bi2Ge3O9 ceramics for application as advanced ceramic substrate

AU - Ma, Xing Hua

AU - Kweon, Sang Hyo

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Young Sik

N1 - Funding Information: We would like to acknowledge the financial support from the R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning) and NST (National Research Council of Science & Technology) of Republic Korea (Grant CAP-13-02-ETRI).

PY - 2017/2/1

Y1 - 2017/2/1

N2 - During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.

AB - During the synthesis of Bi2Ge3O9 ceramics using Bi2O3 + 3GeO2 powders, the Bi4Ge3O12 phase was formed at low temperature (≤800 °C). Bi4Ge3O12 preferentially adopted GeO2-excess phase, and this phase was consistently present in the sintered Bi2Ge3O9 ceramic as a secondary phase. Therefore, Bi4Ge3O12 powder was first calcined and subsequently reacted with GeO2 powder to obtain the pure Bi2Ge3O9 ceramic through the following reaction: 1/2Bi4Ge3O12 + 3/2GeO2 → Bi2Ge3O9Formation of the Bi2Ge3O9 phase was initiated at temperature of 850 °C. The pure Bi2Ge3O9 ceramic sintered at 875 °C for 8 h had a dense microstructure with an average grain size of 2.7 μm. Furthermore, the pure Bi2Ge3O9 ceramic exhibited promising microwave dielectric properties for the advanced ceramic substrate: εr = 9.7, Q × f = 48,573 GHz and τf = −29.5 ppm/°C.

KW - Advanced ceramic substrates

KW - BiGeO ceramics

KW - LTCC

KW - Microwave dielectric properties

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