Synthesis and microwave dielectric properties of Bi4(SiO 4)3 ceramics

Jin Seong Kim; Mi Ri Joung; Myung Eun Song; Sahn Nahm; Jong Hoo Paik; Byung Hyun Choi; Soon Jae Yoo

doi:10.1111/j.1551-2916.2008.02657.x

Synthesis and microwave dielectric properties of Bi₄(SiO ₄)₃ ceramics

Jin Seong Kim, Mi Ri Joung, Myung Eun Song, Sahn Nahm, Jong Hoo Paik, Byung Hyun Choi, Soon Jae Yoo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Bi₄(SiO₄)₃ ceramics were synthesized and their microwave dielectric properties were investigated. The Bi ₁₂SiO₂₀ second phase was formed at approximately 400°C, while the Bi₂O₂SiO₃ and Bi ₄(SiO₄)₃ phases started to form at 600°C. The amount of the Bi₁₂SiO₂₀ and Bi₂O ₂SiO₃ second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi₄(SiO₄)₃ phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi₄(SiO ₄)₃ ceramics were obtained. In particular, the Bi ₄(SiO₄)₃ ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of ε_r=14.9, Q × f=36 101 GHz and τ_f=-9.42 ppm/°C.

Original language	English
Pages (from-to)	3461-3464
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	91
Issue number	10
DOIs	https://doi.org/10.1111/j.1551-2916.2008.02657.x
Publication status	Published - 2008 Oct

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/j.1551-2916.2008.02657.x

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title = "Synthesis and microwave dielectric properties of Bi4(SiO 4)3 ceramics",

abstract = "Bi4(SiO4)3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12SiO20 second phase was formed at approximately 400°C, while the Bi2O2SiO3 and Bi 4(SiO4)3 phases started to form at 600°C. The amount of the Bi12SiO20 and Bi2O 2SiO3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi4(SiO4)3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi4(SiO 4)3 ceramics were obtained. In particular, the Bi 4(SiO4)3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of εr=14.9, Q × f=36 101 GHz and τf=-9.42 ppm/°C.",

author = "Kim, {Jin Seong} and Joung, {Mi Ri} and Song, {Myung Eun} and Sahn Nahm and Paik, {Jong Hoo} and Choi, {Byung Hyun} and Yoo, {Soon Jae}",

year = "2008",

month = oct,

doi = "10.1111/j.1551-2916.2008.02657.x",

language = "English",

volume = "91",

pages = "3461--3464",

journal = "Journal of the American Ceramic Society",

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TY - JOUR

T1 - Synthesis and microwave dielectric properties of Bi4(SiO 4)3 ceramics

AU - Kim, Jin Seong

AU - Joung, Mi Ri

AU - Song, Myung Eun

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Choi, Byung Hyun

AU - Yoo, Soon Jae

PY - 2008/10

Y1 - 2008/10

N2 - Bi4(SiO4)3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12SiO20 second phase was formed at approximately 400°C, while the Bi2O2SiO3 and Bi 4(SiO4)3 phases started to form at 600°C. The amount of the Bi12SiO20 and Bi2O 2SiO3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi4(SiO4)3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi4(SiO 4)3 ceramics were obtained. In particular, the Bi 4(SiO4)3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of εr=14.9, Q × f=36 101 GHz and τf=-9.42 ppm/°C.

AB - Bi4(SiO4)3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12SiO20 second phase was formed at approximately 400°C, while the Bi2O2SiO3 and Bi 4(SiO4)3 phases started to form at 600°C. The amount of the Bi12SiO20 and Bi2O 2SiO3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi4(SiO4)3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi4(SiO 4)3 ceramics were obtained. In particular, the Bi 4(SiO4)3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of εr=14.9, Q × f=36 101 GHz and τf=-9.42 ppm/°C.

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DO - 10.1111/j.1551-2916.2008.02657.x

M3 - Article

AN - SCOPUS:53349097422

SN - 0002-7820

VL - 91

SP - 3461

EP - 3464

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 10

ER -

Synthesis and microwave dielectric properties of Bi₄(SiO ₄)₃ ceramics

Abstract

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