Synthesis and microwave dielectric properties of Bi4(SiO 4)3 ceramics

Jin Seong Kim, Mi Ri Joung, Myung Eun Song, Sahn Nahm, Jong Hoo Paik, Byung Hyun Choi, Soon Jae Yoo

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13 Citations (Scopus)


Bi4(SiO4)3 ceramics were synthesized and their microwave dielectric properties were investigated. The Bi 12SiO20 second phase was formed at approximately 400°C, while the Bi2O2SiO3 and Bi 4(SiO4)3 phases started to form at 600°C. The amount of the Bi12SiO20 and Bi2O 2SiO3 second phases decreased as the firing temperature exceeded 650°C. A homogeneous Bi4(SiO4)3 phase was obtained for the specimen fired at 850°C. For the specimens sintered at 900°C for more than 5 h, high-density Bi4(SiO 4)3 ceramics were obtained. In particular, the Bi 4(SiO4)3 ceramics sintered at 900°C for 8 h exhibited the good microwave dielectric properties of εr=14.9, Q × f=36 101 GHz and τf=-9.42 ppm/°C.

Original languageEnglish
Pages (from-to)3461-3464
Number of pages4
JournalJournal of the American Ceramic Society
Issue number10
Publication statusPublished - 2008 Oct

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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