TY - JOUR
T1 - Synthesis and microwave dielectric properties of Re3Ga 5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics
AU - Kim, Jae Chul
AU - Kim, Min Han
AU - Lim, Jong Bong
AU - Nahm, Sahn
AU - Paik, Jong Hoo
AU - Kim, Jong Hee
PY - 2007/2
Y1 - 2007/2
N2 - Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of εr = 12.4, Q × f = 192173 GHz, and τf = -19.2 ppm/°C.
AB - Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of εr = 12.4, Q × f = 192173 GHz, and τf = -19.2 ppm/°C.
UR - http://www.scopus.com/inward/record.url?scp=33846555525&partnerID=8YFLogxK
U2 - 10.1111/j.1551-2916.2006.01435.x
DO - 10.1111/j.1551-2916.2006.01435.x
M3 - Article
AN - SCOPUS:33846555525
SN - 0002-7820
VL - 90
SP - 641
EP - 644
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 2
ER -