Synthesis and microwave dielectric properties of Re3Ga 5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics

Jae Chul Kim; Min Han Kim; Jong Bong Lim; Sahn Nahm; Jong Hoo Paik; Jong Hee Kim

doi:10.1111/j.1551-2916.2006.01435.x

Synthesis and microwave dielectric properties of Re₃Ga ₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics

Jae Chul Kim
, Min Han Kim
, Jong Bong Lim
, Sahn Nahm^*
, Jong Hoo Paik
, Jong Hee Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re₃Ga₅O₁₂ ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (ε_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm₃Ga₅O₁₂ ceramics sintered at 1450°C exhibited good microwave dielectric properties of ε_r = 12.4, Q × f = 192173 GHz, and τ_f = -19.2 ppm/°C.

Original language	English
Pages (from-to)	641-644
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	90
Issue number	2
DOIs	https://doi.org/10.1111/j.1551-2916.2006.01435.x
Publication status	Published - 2007 Feb

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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title = "Synthesis and microwave dielectric properties of Re3Ga 5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics",

abstract = "Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of εr = 12.4, Q × f = 192173 GHz, and τf = -19.2 ppm/°C.",

author = "Kim, \{Jae Chul\} and Kim, \{Min Han\} and Lim, \{Jong Bong\} and Sahn Nahm and Paik, \{Jong Hoo\} and Kim, \{Jong Hee\}",

year = "2007",

month = feb,

doi = "10.1111/j.1551-2916.2006.01435.x",

language = "English",

volume = "90",

pages = "641--644",

journal = "Journal of the American Ceramic Society",

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TY - JOUR

T1 - Synthesis and microwave dielectric properties of Re3Ga 5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics

AU - Kim, Jae Chul

AU - Kim, Min Han

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Paik, Jong Hoo

AU - Kim, Jong Hee

PY - 2007/2

Y1 - 2007/2

N2 - Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of εr = 12.4, Q × f = 192173 GHz, and τf = -19.2 ppm/°C.

AB - Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re3Ga5O12 ceramics sintered at 1350°-1500°C had a high-quality factor (Q × f) ranging from 40 000 to 192173 GHz and a low-dielectric constant (εr) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τf) in the range of -33.7 to - 12.4 ppm/°C. In particular, the Sm3Ga5O12 ceramics sintered at 1450°C exhibited good microwave dielectric properties of εr = 12.4, Q × f = 192173 GHz, and τf = -19.2 ppm/°C.

UR - https://www.scopus.com/pages/publications/33846555525

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DO - 10.1111/j.1551-2916.2006.01435.x

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VL - 90

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IS - 2

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Synthesis and microwave dielectric properties of Re₃Ga ₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) ceramics

Abstract

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