Synthesis of CIGS absorber layers via a paste coating

Jong Won Park; Young Woo Choi; Eunjoo Lee; Oh Shim Joo; Sungho Yoon; Byoung Koun Min

doi:10.1016/j.jcrysgro.2009.02.038

Synthesis of CIGS absorber layers via a paste coating

Jong Won Park, Young Woo Choi, Eunjoo Lee, Oh Shim Joo, Sungho Yoon, Byoung Koun Min

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

CuIn_xGa_1-xSe₂ (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.

Original language	English
Pages (from-to)	2621-2625
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	9
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.02.038
Publication status	Published - 2009 Apr 15

Keywords

A1. Thin films
A1. X-ray diffraction
A3. Solar cells
B2. Semiconducting quarternary alloys
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2009.02.038

Cite this

@article{ed512713ef8f4b1dace748a5183c7879,

title = "Synthesis of CIGS absorber layers via a paste coating",

abstract = "CuInxGa1-xSe2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.",

keywords = "A1. Thin films, A1. X-ray diffraction, A3. Solar cells, B2. Semiconducting quarternary alloys, B3. Solar cells",

author = "Park, {Jong Won} and Choi, {Young Woo} and Eunjoo Lee and Joo, {Oh Shim} and Sungho Yoon and Min, {Byoung Koun}",

year = "2009",

month = apr,

day = "15",

doi = "10.1016/j.jcrysgro.2009.02.038",

language = "English",

volume = "311",

pages = "2621--2625",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "9",

}

TY - JOUR

T1 - Synthesis of CIGS absorber layers via a paste coating

AU - Park, Jong Won

AU - Choi, Young Woo

AU - Lee, Eunjoo

AU - Joo, Oh Shim

AU - Yoon, Sungho

AU - Min, Byoung Koun

PY - 2009/4/15

Y1 - 2009/4/15

N2 - CuInxGa1-xSe2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.

AB - CuInxGa1-xSe2 (CIGS) thin films were prepared by a paste coating with the aim of developing a simpler and the lower cost method for fabricating the absorber layers of thin film solar cells. In particular, a paste of a Cu, In, Ga, and Se precursor mixture was first prepared, followed by a reaction between them at elevated temperatures after depositing the paste onto a glass substrate. No apparent change in composition was observed during thermal annealing at 450 °C in the absence of a gas-phase selenium source. A pre-annealing process at 250 °C under ambient conditions performed before annealing (450 °C) under reduction conditions reduced the level of carbon deposition in/on the films without perturbing the stoichiometry of the CIGS thin films.

KW - A1. Thin films

KW - A1. X-ray diffraction

KW - A3. Solar cells

KW - B2. Semiconducting quarternary alloys

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=65349175028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65349175028&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.02.038

DO - 10.1016/j.jcrysgro.2009.02.038

M3 - Article

AN - SCOPUS:65349175028

SN - 0022-0248

VL - 311

SP - 2621

EP - 2625

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 9

ER -

Synthesis of CIGS absorber layers via a paste coating

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this