TY - JOUR
T1 - Synthesis of CIGS powders
T2 - Transition from binary to quaternary crystalline structure
AU - Lee, Eunjoo
AU - Cho, Jin Woo
AU - Kim, Jaehoon
AU - Yun, Jaeho
AU - Kim, Jong Hak
AU - Min, Byoung Koun
N1 - Funding Information:
This work is supported by the Converging Research Center Program through the National Research Foundation of Korea ( NRF-2009-0081910 ) and the National Research Foundation of Korea Grant ( NRF-2009-C1AAA001-0092935 ) funded by the Ministry of Education, Science and Technology .
PY - 2010/9/17
Y1 - 2010/9/17
N2 - A chalcogenide quaternary crystal (CIGS) composed of Cu, In, Ga, and Se was synthesized by a solution reaction of Cu, In, and Ga nitrate and Se chloride in organic solvent, followed by an annealing process. In our synthetic method, the binary crystal of CuCl was found to be initially formed during the solution reaction at 130 °C for 3 h, but it turned into another binary crystal structure, β-CuSe at the longer time reaction (>12 h). The binary crystalline structure was then turned into quaternary crystal due to the heat treatment at 450 °C in reduction conditions and in the absence of additional elemental sources of In and/or Ga. For potential solar cell applications, the powder was also applied to prepare CIGS film by a paste coating. The structural characteristics of the powder and film were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), and scanning electron microscopy (SEM).
AB - A chalcogenide quaternary crystal (CIGS) composed of Cu, In, Ga, and Se was synthesized by a solution reaction of Cu, In, and Ga nitrate and Se chloride in organic solvent, followed by an annealing process. In our synthetic method, the binary crystal of CuCl was found to be initially formed during the solution reaction at 130 °C for 3 h, but it turned into another binary crystal structure, β-CuSe at the longer time reaction (>12 h). The binary crystalline structure was then turned into quaternary crystal due to the heat treatment at 450 °C in reduction conditions and in the absence of additional elemental sources of In and/or Ga. For potential solar cell applications, the powder was also applied to prepare CIGS film by a paste coating. The structural characteristics of the powder and film were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electronic diffraction (SAED), and scanning electron microscopy (SEM).
KW - Binary
KW - CIGS
KW - CuInGaSe
KW - Quaternary
UR - http://www.scopus.com/inward/record.url?scp=77956460079&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2010.07.131
DO - 10.1016/j.jallcom.2010.07.131
M3 - Article
AN - SCOPUS:77956460079
SN - 0925-8388
VL - 506
SP - 969
EP - 972
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
IS - 2
ER -