Synthesis of high-purity Gap nanowires using a vapor deposition method

S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee, C. J. Lee

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


High-purity gallium phosphide (GaP) nanowires were successfully synthesized on the nickel monoxide (NiO) or the cobalt monoxide (CoO) catalyzed alumina substrate by a simple vapor deposition method. To synthesize the high-purity GaP nanowires, the mixture source of gallium (Ga) and GaP powder was directly vaporized in the range of 850-1000 °C for 60 min under argon ambient. The diameter of GaP nanowires was about 38-105 nm and the length was up to several hundreds of micrometers. The GaP nanowires have a single-crystalline zinc blend structure and reveal the core-shell structure, which consists of the GaP core and the GaPO4/Ga2O3 outer layers. We demonstrate that the mixture of Ga/GaP is an ideal source for the high-yield GaP nanowires.

Original languageEnglish
Pages (from-to)717-722
Number of pages6
JournalChemical Physics Letters
Issue number5-6
Publication statusPublished - 2003 Jan 10
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by Center for Nanotubes and Nanostructured Composites at Sungkyunkwan University.

Copyright 2005 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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