Abstract
A novel platinum aminoalkoxide complex, Pt(dmamp)2 has been prepared by the reaction of cis-(py)2PtI2 with two equivalents of Na(dmamp) (dmamp = 1-dimethylamino-2-methyl-2-propanolate). Single-crystal X-ray crystallographic analysis shows that the Pt(dmamp)2 complex keeps a square planar geometry with each two nitrogen atoms and two oxygen atoms having trans configuration. Platinum films have been deposited on TaN/ Ta/Si substrates by metal organic chemical vapor deposition (MOCVD) using Pt(dmamp)2. As-deposited platinum thin films did not contain any appreciable amounts of impurities except a little carbon. As the deposition temperature was increased, the films resistivity and deposition rate increased. The electrical resistivity (13.6 μ Ωcm) of Pt film deposited at 400 °C is a little higher than the bulk value (10.5 μ Ωcm) at 293 K. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.
Original language | English |
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Pages (from-to) | 1491-1494 |
Number of pages | 4 |
Journal | Bulletin of the Korean Chemical Society |
Volume | 29 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2008 Aug 20 |
Keywords
- Aminoalkoxide
- MOCVD
- Platinum
- Precursor
- Thin films
ASJC Scopus subject areas
- General Chemistry