Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures

Yoon Shon; Im Taek Yoon; Sejoon Lee; Y. H. Kwon; Chong S. Yoon; C. S. Park; Cheol Jin Lee; Dong Jin Lee; H. S. Kim; T. W. Kang

doi:10.3938/jkps.63.2158

Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures

Yoon Shon, Im Taek Yoon, Sejoon Lee, Y. H. Kwon, Chong S. Yoon, C. S. Park, Cheol Jin Lee, Dong Jin Lee, H. S. Kim, T. W. Kang

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO₂, as verified by x-ray diffraction. However, minute presence of MnO₂ was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T _C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO₂.

Original language	English
Pages (from-to)	2158-2164
Number of pages	7
Journal	Journal of the Korean Physical Society
Volume	63
Issue number	11
DOIs	https://doi.org/10.3938/jkps.63.2158
Publication status	Published - 2013

Bibliographical note

Funding Information:
This research was supported by the Leading Foreign Research Institute Recruitment Program (grant no. NRF-2012-00109) and the Basic Science Research Program (grant nos. KRF-2008-313-C00264 and 2013R1A1A2008875) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).

Keywords

Chemical vapor deposition (CVD)
InP
Molecular beam epitaxy (MBE)
Semiconductors

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.63.2158

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title = "Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures",

abstract = "The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.",

keywords = "Chemical vapor deposition (CVD), InP, Molecular beam epitaxy (MBE), Semiconductors",

author = "Yoon Shon and Yoon, {Im Taek} and Sejoon Lee and Kwon, {Y. H.} and Yoon, {Chong S.} and Park, {C. S.} and Lee, {Cheol Jin} and Lee, {Dong Jin} and Kim, {H. S.} and Kang, {T. W.}",

note = "Funding Information: This research was supported by the Leading Foreign Research Institute Recruitment Program (grant no. NRF-2012-00109) and the Basic Science Research Program (grant nos. KRF-2008-313-C00264 and 2013R1A1A2008875) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).",

year = "2013",

doi = "10.3938/jkps.63.2158",

language = "English",

volume = "63",

pages = "2158--2164",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "11",

}

TY - JOUR

T1 - Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures

AU - Shon, Yoon

AU - Yoon, Im Taek

AU - Lee, Sejoon

AU - Kwon, Y. H.

AU - Yoon, Chong S.

AU - Park, C. S.

AU - Lee, Cheol Jin

AU - Lee, Dong Jin

AU - Kim, H. S.

AU - Kang, T. W.

N1 - Funding Information: This research was supported by the Leading Foreign Research Institute Recruitment Program (grant no. NRF-2012-00109) and the Basic Science Research Program (grant nos. KRF-2008-313-C00264 and 2013R1A1A2008875) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST).

PY - 2013

Y1 - 2013

N2 - The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.

AB - The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 °C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T C, which persisted up to ∼ 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2.

KW - Chemical vapor deposition (CVD)

KW - InP

KW - Molecular beam epitaxy (MBE)

KW - Semiconductors

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U2 - 10.3938/jkps.63.2158

DO - 10.3938/jkps.63.2158

M3 - Article

AN - SCOPUS:84890497047

SN - 0374-4884

VL - 63

SP - 2158

EP - 2164

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 11

ER -

Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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