TY - JOUR
T1 - Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitors
AU - Cho, Cheol Jin
AU - Noh, Myoung Sub
AU - Lee, Woo Chul
AU - An, Cheol Hyun
AU - Kang, Chong Yun
AU - Hwang, Cheol Seong
AU - Kim, Seong Keun
N1 - Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E27160).
Publisher Copyright:
© The Royal Society of Chemistry 2017.
PY - 2017
Y1 - 2017
N2 - Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 °C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs.
AB - Noble metal oxides, such as RuO2, have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally have a high work function compared to noble metals and enhance the crystallinity of dielectric materials grown on them, resulting in a lower leakage current and higher dielectric constants. Despite these advantages, noble metal oxides are easily reduced during the dielectric film, such as TiO2, growth on top or by annealing under a forming gas atmosphere, degrading the capacitor performance. In this work, Ta-doped SnO2 is suggested as a potential capacitor electrode for DRAMs. Ta-Doped SnO2 films have a high work function, comparable to that of RuO2, and induce the formation of a high-temperature phase with a high dielectric constant, namely rutile TiO2, at low temperatures. More importantly, the Ta-doped SnO2 films show suitable structural and chemical stabilities, even after annealing at 400 °C under a forming gas atmosphere. RuO2 films, on the other hand, turn into a mixture of RuO2 and Ru after annealing under the same conditions. These findings suggest that Ta-doped SnO2 could serve as capacitor electrodes in next-generation DRAMs.
UR - http://www.scopus.com/inward/record.url?scp=85029836846&partnerID=8YFLogxK
U2 - 10.1039/c7tc03467a
DO - 10.1039/c7tc03467a
M3 - Article
AN - SCOPUS:85029836846
SN - 2050-7534
VL - 5
SP - 9405
EP - 9411
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 36
ER -