Hybrid organic-inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices due to their low cost, low operation voltage, high on/off ratio, and excellent mechanical properties. However, the HP-based RS memory devices continue to face several challenges owing to the short endurance and stability of the HP film. Herein, two-dimensional/three-dimensional (2D/3D) perovskite heterojunction films were prepared via a low-temperature all-solution process and their RS behavior was investigated for the first time. The 2D/3D perovskite RS devices exhibited excellent performance with an endurance of 2700 cycles, a high on/off ratio of 106, and an operation speed of 640 μs. The calculated thermally assisted ion hopping activation energy and the results of the time-of-flight secondary ion mass spectroscopy demonstrated that the 2D perovskite layer could efficiently prevent the Ag ion migration into the 3D perovskite film. Moreover, we found that owing to its high thermal conductivity, the 2D perovskite can control the rupture of the Ag conductive filament. Thus, the 2D perovskite layer enhances endurance by controlling both Ag migration and filament rupture. Hence, this study provides an alternate strategy for improving endurance of HP-based RS memory devices.
Bibliographical noteFunding Information:
This work was financially supported by the Future Material Discovery (2016M3D1A1027664, 2016M3D1A1027666 and 2019M3D1A2104108) and the National Research Foundation of Korea (KRF) grant funded by the Korean Government (MSIT) (2019R1F1A1064095).
Copyright © 2020 American Chemical Society.
- 2D/3D heterointerface
- filament rupture
- halide perovskites
- resistive switching
ASJC Scopus subject areas
- Materials Science(all)