Ta₂O_5-y-based ReRAM device with annealing-free Ag:ZrN_x-based bilayer selector device

Engineering

• Resistive 100%
• Switching Threshold 100%
• Array Size 100%
• Energy Engineering 50%
• Cross Section 50%
• Transmissions 50%
• Delay Time 50%
• Applicability 50%
• Radio Frequency 50%
• Equivalent Circuit 50%
• Resistive Random Access Memory 50%
• Array Architecture 50%
• Array Configuration 50%
• Electric Network Analysis 50%

Material Science

• Switch 100%
• Transmission Electron Microscopy 50%
• Density 50%
• Electronic Circuit 50%
• Energy-Dispersive X-Ray Spectroscopy 50%
• Resistive Random-Access Memory 50%

Keyphrases

• Voltage Uniformity 33%
• Current Suppression 33%