Te doping of GaInP: Ordering and step structure

S. H. Lee; C. Y. Fetzer; G. B. Stringfellow; D. H. Lee; T. Y. Seong

doi:10.1063/1.369719

Te doping of GaInP: Ordering and step structure

S. H. Lee, C. Y. Fetzer, G. B. Stringfellow, D. H. Lee, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A model is developed which rationalizes the change in step structure caused by Te doping. Loss of CuPT ordering are caused by high adatom sticking coefficient at the monolayer [100] steps formed due to Te doping. The elimination of 3D mounds on the surface during growth are also observed, since steps are present due to unintentional substrate misorientation. The change in the relative sticking coefficients at up and down steps due to the transition from bilayer steps terminated by (2×2) reconstructed surfaces to monolayer steps are responsible for the reduction in step bunching.

Original language	English
Pages (from-to)	3590-3596
Number of pages	7
Journal	Journal of Applied Physics
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.369719
Publication status	Published - 1999 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.369719

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AU - Fetzer, C. Y.

AU - Stringfellow, G. B.

AU - Lee, D. H.

AU - Seong, T. Y.

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Y1 - 1999/4/1

N2 - A model is developed which rationalizes the change in step structure caused by Te doping. Loss of CuPT ordering are caused by high adatom sticking coefficient at the monolayer [100] steps formed due to Te doping. The elimination of 3D mounds on the surface during growth are also observed, since steps are present due to unintentional substrate misorientation. The change in the relative sticking coefficients at up and down steps due to the transition from bilayer steps terminated by (2×2) reconstructed surfaces to monolayer steps are responsible for the reduction in step bunching.

AB - A model is developed which rationalizes the change in step structure caused by Te doping. Loss of CuPT ordering are caused by high adatom sticking coefficient at the monolayer [100] steps formed due to Te doping. The elimination of 3D mounds on the surface during growth are also observed, since steps are present due to unintentional substrate misorientation. The change in the relative sticking coefficients at up and down steps due to the transition from bilayer steps terminated by (2×2) reconstructed surfaces to monolayer steps are responsible for the reduction in step bunching.

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Te doping of GaInP: Ordering and step structure

Abstract

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