Abstract
The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.
Original language | English |
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Pages (from-to) | 232-236 |
Number of pages | 5 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 282 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Nov |
Event | International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan, Province of China Duration: 2003 Nov 13 → 2003 Nov 16 |
Bibliographical note
Funding Information:This work was supported by The National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as one of The 21st Century Frontier Programs.
Keywords
- Magnetic tunnel junction
- Magnetoreistance
- Magnetoresistive random access memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics