Technological issues for high-density MRAM development

Taewan Kim, Young Keun Kim, Wanjun Park

    Research output: Contribution to journalConference articlepeer-review

    16 Citations (Scopus)

    Abstract

    The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

    Original languageEnglish
    Pages (from-to)232-236
    Number of pages5
    JournalJournal of Magnetism and Magnetic Materials
    Volume282
    Issue number1-3
    DOIs
    Publication statusPublished - 2004 Nov
    EventInternational Symposium on Advanced Magnetic Technologies - Taipei, Taiwan, Province of China
    Duration: 2003 Nov 132003 Nov 16

    Bibliographical note

    Funding Information:
    This work was supported by The National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as one of The 21st Century Frontier Programs.

    Keywords

    • Magnetic tunnel junction
    • Magnetoreistance
    • Magnetoresistive random access memory

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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