Technological issues for high-density MRAM development

Taewan Kim; Young Keun Kim; Wanjun Park

doi:10.1016/j.jmmm.2004.04.052

Technological issues for high-density MRAM development

Taewan Kim, Young Keun Kim, Wanjun Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

Original language	English
Pages (from-to)	232-236
Number of pages	5
Journal	Journal of Magnetism and Magnetic Materials
Volume	282
Issue number	1-3
DOIs	https://doi.org/10.1016/j.jmmm.2004.04.052
Publication status	Published - 2004 Nov
Event	International Symposium on Advanced Magnetic Technologies - Taipei, Taiwan, Province of China Duration: 2003 Nov 13 → 2003 Nov 16

Keywords

Magnetic tunnel junction
Magnetoreistance
Magnetoresistive random access memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2004.04.052

Cite this

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title = "Technological issues for high-density MRAM development",

abstract = "The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.",

keywords = "Magnetic tunnel junction, Magnetoreistance, Magnetoresistive random access memory",

author = "Taewan Kim and Kim, {Young Keun} and Wanjun Park",

note = "Funding Information: This work was supported by The National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as one of The 21st Century Frontier Programs.; International Symposium on Advanced Magnetic Technologies ; Conference date: 13-11-2003 Through 16-11-2003",

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language = "English",

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T1 - Technological issues for high-density MRAM development

AU - Kim, Taewan

AU - Kim, Young Keun

AU - Park, Wanjun

N1 - Funding Information: This work was supported by The National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as one of The 21st Century Frontier Programs.

PY - 2004/11

Y1 - 2004/11

N2 - The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

AB - The key attributes of magnetoresistive random access memory [MRAM] technology are known as non-volatility with high speed and density, radiation hardness, and unlimited endurance. A lot of results have been announced for the commercial market. It is anticipated that MRAM would play an important role in future memory market through its unique, functional advantages. For high-density MRAM as a standalone memory, several technological issues related with MRAM core cells should be preferentially solved. The topic will cover basic issues of sub-micron MRAM core cell and consider the work related to MRAM issues, such as cell stability and switching process.

KW - Magnetic tunnel junction

KW - Magnetoreistance

KW - Magnetoresistive random access memory

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U2 - 10.1016/j.jmmm.2004.04.052

DO - 10.1016/j.jmmm.2004.04.052

M3 - Conference article

AN - SCOPUS:5744246336

SN - 0304-8853

VL - 282

SP - 232

EP - 236

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - International Symposium on Advanced Magnetic Technologies

Y2 - 13 November 2003 through 16 November 2003

ER -

Technological issues for high-density MRAM development

Abstract

Keywords

ASJC Scopus subject areas

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