Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap

Jonghee Suh; Jinki Hong; J. Franc; A. E. Bolotnikov; A. Hossain; Ralph B. James; Kihyun Kim

doi:10.1109/TNS.2016.2598743

Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap

Jonghee Suh, Jinki Hong, J. Franc, A. E. Bolotnikov, A. Hossain, Ralph B. James, Kihyun Kim

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Defects located at the E_C - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS)and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.

Original language	English
Article number	7539359
Pages (from-to)	2657-2661
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	63
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2016.2598743
Publication status	Published - 2016 Oct

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

1.1-eV traps
CdZnTe
I-DLTS
Te inclusions
Te secondary-phase defects

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap",

abstract = "Defects located at the EC - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS)and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.",

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author = "Jonghee Suh and Jinki Hong and J. Franc and Bolotnikov, {A. E.} and A. Hossain and James, {Ralph B.} and Kihyun Kim",

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AU - Suh, Jonghee

AU - Hong, Jinki

AU - Franc, J.

AU - Bolotnikov, A. E.

AU - Hossain, A.

AU - James, Ralph B.

AU - Kim, Kihyun

PY - 2016/10

Y1 - 2016/10

N2 - Defects located at the EC - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS)and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.

AB - Defects located at the EC - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS)and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.

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Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap

Abstract

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Keywords

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