TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate

T. Y. Seong; A. G. Norman; J. L. Hutchison; G. R. Booker; A. G. Cullis; S. J. Bass; L. L. Taylor

TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In_xGa_1-xAs layers. Dependence on growth temperature and growth rate

T. Y. Seong, A. G. Norman, J. L. Hutchison, G. R. Booker, A. G. Cullis, S. J. Bass, L. L. Taylor

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In_0.53Ga_0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

Original language	English
Title of host publication	Institute of Physics Conference Series
Publisher	Publ by Inst of Physics Publ Ltd
Pages	463-468
Number of pages	6
Edition	117
ISBN (Print)	0854984062
Publication status	Published - 1991
Externally published	Yes
Event	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl Duration: 1991 Mar 25 → 1991 Mar 28

Publication series

Name	Institute of Physics Conference Series
Number	117
ISSN (Print)	0373-0751

Other

Other	Proceedings of the Conference on Microscopy of Semiconducting Materials 1991
City	Oxford, Engl
Period	91/3/25 → 91/3/28

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

Seong, T. Y., Norman, A. G., Hutchison, J. L., Booker, G. R., Cullis, A. G., Bass, S. J., & Taylor, L. L. (1991). TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In_xGa_1-xAs layers. Dependence on growth temperature and growth rate. In Institute of Physics Conference Series (117 ed., pp. 463-468). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.

TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In_xGa_1-xAs layers. Dependence on growth temperature and growth rate. / Seong, T. Y.; Norman, A. G.; Hutchison, J. L. et al.
Institute of Physics Conference Series. 117. ed. Publ by Inst of Physics Publ Ltd, 1991. p. 463-468 (Institute of Physics Conference Series; No. 117).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Seong, TY, Norman, AG, Hutchison, JL, Booker, GR, Cullis, AG, Bass, SJ & Taylor, LL 1991, TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD In_xGa_1-xAs layers. Dependence on growth temperature and growth rate. in Institute of Physics Conference Series. 117 edn, Institute of Physics Conference Series, no. 117, Publ by Inst of Physics Publ Ltd, pp. 463-468, Proceedings of the Conference on Microscopy of Semiconducting Materials 1991, Oxford, Engl, 91/3/25.

@inproceedings{afb5d8e6cd77460f87417a4243a788d9,

title = "TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate",

abstract = "We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In0.53Ga0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.",

author = "Seong, {T. Y.} and Norman, {A. G.} and Hutchison, {J. L.} and Booker, {G. R.} and Cullis, {A. G.} and Bass, {S. J.} and Taylor, {L. L.}",

year = "1991",

language = "English",

isbn = "0854984062",

series = "Institute of Physics Conference Series",

publisher = "Publ by Inst of Physics Publ Ltd",

number = "117",

pages = "463--468",

booktitle = "Institute of Physics Conference Series",

edition = "117",

note = "Proceedings of the Conference on Microscopy of Semiconducting Materials 1991 ; Conference date: 25-03-1991 Through 28-03-1991",

}

TY - GEN

T1 - TEM, TED and HREM studies of atomic ordering and associated domains in MOCVD InxGa1-xAs layers. Dependence on growth temperature and growth rate

AU - Seong, T. Y.

AU - Norman, A. G.

AU - Hutchison, J. L.

AU - Booker, G. R.

AU - Cullis, A. G.

AU - Bass, S. J.

AU - Taylor, L. L.

PY - 1991

Y1 - 1991

N2 - We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In0.53Ga0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

AB - We report the first detailed TEM, TED and HREM results for atomic ordering in (001) MOCVD In0.53Ga0.47As layers. Ordering of the CuPt-type was observed in layers grown below 650°C, with a maximum degree of ordering occurring at 550°C. At 600°C the degree of ordering was lower for a slower growth rate. In the layers grown at 550°C, separate columnar-like ordered regions of the two observed {111} variants were present and these contained antiphase boundaries (APBs) whose density and orientation strongly depended on the growth rate. Mechanisms are suggested to explain the observations.

UR - http://www.scopus.com/inward/record.url?scp=0026360355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026360355&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026360355

SN - 0854984062

T3 - Institute of Physics Conference Series

SP - 463

EP - 468

BT - Institute of Physics Conference Series

PB - Publ by Inst of Physics Publ Ltd

T2 - Proceedings of the Conference on Microscopy of Semiconducting Materials 1991

Y2 - 25 March 1991 through 28 March 1991

ER -