Abstract
In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 mV/°C, and its static current consumption is found to be only 0.83 μ[email protected] V.
Original language | English |
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Pages (from-to) | 406-413 |
Number of pages | 8 |
Journal | ETRI Journal |
Volume | 32 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2010 Jun |
Keywords
- Back-bias voltage generator
- Memories
- Pseudo SRAM
- RCAT
- Temperature
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Computer Science
- Electrical and Electronic Engineering