Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

S. Kim; S. J. Rhee; J. O. White; A. M. Mitofsky; X. Li; G. C. Papen; J. J. Coleman; S. G. Bishop

doi:10.1016/S0921-5107(00)00694-2

Temperature dependence of photoluminescence spectra from multiple Er³⁺ sites in Er-implanted undoped and Mg-doped GaN

S. Kim, S. J. Rhee, J. O. White, A. M. Mitofsky, X. Li, G. C. Papen, J. J. Coleman, S. G. Bishop

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm ⁴I_13/2 to ⁴I_15/2 emissions of the multiple Er³⁺ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er³⁺ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er³⁺ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er³⁺ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er³⁺ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er³⁺ PL in Mg-doped GaN is also evident at room temperature.

Original language	English
Pages (from-to)	136-139
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	81
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00694-2
Publication status	Published - 2001 Apr 24

Bibliographical note

Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.

Keywords

Er-implanted undoped and Mg-doped GaN
Temperature dependence of photoluminescence spectra

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S0921-5107(00)00694-2

Cite this

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title = "Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN",

abstract = "Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.",

keywords = "Er-implanted undoped and Mg-doped GaN, Temperature dependence of photoluminescence spectra",

author = "S. Kim and Rhee, {S. J.} and White, {J. O.} and Mitofsky, {A. M.} and X. Li and Papen, {G. C.} and Coleman, {J. J.} and Bishop, {S. G.}",

year = "2001",

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doi = "10.1016/S0921-5107(00)00694-2",

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T1 - Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

AU - Kim, S.

AU - Rhee, S. J.

AU - White, J. O.

AU - Mitofsky, A. M.

AU - Li, X.

AU - Papen, G. C.

AU - Coleman, J. J.

AU - Bishop, S. G.

PY - 2001/4/24

Y1 - 2001/4/24

N2 - Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

AB - Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.

KW - Er-implanted undoped and Mg-doped GaN

KW - Temperature dependence of photoluminescence spectra

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