Selectively excited photoluminescence (PL) spectroscopy has been carried out on the ∼ 1540 nm 4I13/2 to 4I15/2 emissions of the multiple Er3+ centers observed in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The temperature dependence of the Er3+ PL spectra selectively excited by below-gap light demonstrate different quenching rates for the distinct Er3+ PL centers, and indicate that the PL spectra with the most rapid thermal quenching rates do not contribute to the room temperature, above-gap-pumped Er3+ PL spectrum. In addition, selective PL spectroscopy has been carried out on the Er3+ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging from 6 to 295 K. The results indicate that the previously reported enhancement of the violet-pumped centers' contribution to the low temperature above-gap excited Er3+ PL in Mg-doped GaN is also evident at room temperature.
|Number of pages
|Materials Science and Engineering B: Solid-State Materials for Advanced Technology
|Published - 2001 Apr 24
Copyright 2007 Elsevier B.V., All rights reserved.
- Er-implanted undoped and Mg-doped GaN
- Temperature dependence of photoluminescence spectra
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering