Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Tae Hwan Lee; Hyun Cheol Koo; Kyung Ho Kim; Hyung jun Kim; Joonyeon Chang; Suk Hee Han; Jinki Hong; Sang Ho Lim

doi:10.1016/j.jmmm.2009.07.037

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Tae Hwan Lee, Hyun Cheol Koo, Kyung Ho Kim, Hyung jun Kim, Joonyeon Chang, Suk Hee Han, Jinki Hong, Sang Ho Lim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R₀) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

Original language	English
Pages (from-to)	3795-3798
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	321
Issue number	22
DOIs	https://doi.org/10.1016/j.jmmm.2009.07.037
Publication status	Published - 2009 Nov

Keywords

Interface resistance
Schottky-tunnel-barrier
Spin injection
Spin injection efficiency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2009.07.037

Cite this

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title = "Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure",

abstract = "The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.",

keywords = "Interface resistance, Schottky-tunnel-barrier, Spin injection, Spin injection efficiency",

author = "Lee, {Tae Hwan} and Koo, {Hyun Cheol} and Kim, {Kyung Ho} and Kim, {Hyung jun} and Joonyeon Chang and Han, {Suk Hee} and Jinki Hong and Lim, {Sang Ho}",

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doi = "10.1016/j.jmmm.2009.07.037",

language = "English",

volume = "321",

pages = "3795--3798",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

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TY - JOUR

T1 - Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

AU - Lee, Tae Hwan

AU - Koo, Hyun Cheol

AU - Kim, Kyung Ho

AU - Kim, Hyung jun

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Hong, Jinki

AU - Lim, Sang Ho

PY - 2009/11

Y1 - 2009/11

N2 - The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

AB - The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.

KW - Interface resistance

KW - Schottky-tunnel-barrier

KW - Spin injection

KW - Spin injection efficiency

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DO - 10.1016/j.jmmm.2009.07.037

M3 - Article

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VL - 321

SP - 3795

EP - 3798

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 22

ER -

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Abstract

Keywords

ASJC Scopus subject areas

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