Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Taeho Park, Jaehwan Lee, Jaemin Son, Juhee Jeon, Yeonwoo Shin, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.

Original languageEnglish
Pages (from-to)101458-101464
Number of pages7
JournalIEEE Access
Publication statusPublished - 2022

Bibliographical note

Publisher Copyright:
© 2013 IEEE.


  • Field-effect transistor
  • positive feedback loop
  • simulation
  • temperature-dependent

ASJC Scopus subject areas

  • General Computer Science
  • General Materials Science
  • General Engineering
  • Electrical and Electronic Engineering


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