Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Taeho Park; Jaehwan Lee; Jaemin Son; Juhee Jeon; Yeonwoo Shin; Kyoungah Cho; Sangsig Kim

doi:10.1109/ACCESS.2022.3208116

Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Taeho Park, Jaehwan Lee, Jaemin Son, Juhee Jeon, Yeonwoo Shin, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.

Original language	English
Pages (from-to)	101458-101464
Number of pages	7
Journal	IEEE Access
Volume	10
DOIs	https://doi.org/10.1109/ACCESS.2022.3208116
Publication status	Published - 2022

Bibliographical note

Publisher Copyright:
© 2013 IEEE.

Keywords

Field-effect transistor
positive feedback loop
simulation
temperature-dependent

ASJC Scopus subject areas

Computer Science(all)
Materials Science(all)
Engineering(all)
Electrical and Electronic Engineering

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10.1109/ACCESS.2022.3208116

Cite this

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title = "Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors",

abstract = "In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.",

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T1 - Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

AU - Park, Taeho

AU - Lee, Jaehwan

AU - Son, Jaemin

AU - Jeon, Juhee

AU - Shin, Yeonwoo

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2022

Y1 - 2022

N2 - In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.

AB - In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.

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Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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