In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.
Bibliographical notePublisher Copyright:
© 2013 IEEE.
- Field-effect transistor
- positive feedback loop
ASJC Scopus subject areas
- Computer Science(all)
- Materials Science(all)
- Electrical and Electronic Engineering