Temperature dependent I-V characteristics of plasma hydrogenated Poly-Si TFTs in the low voltage region

This study presents an investigation of the current-voltage characteristics of polycrystalline-silicon p-channel metal-oxide-semiconductor thin film transistors (Poly-Si PMOS TFTs) for static random access memory (SRAM) loads in the low supply voltage region with various operating temperatures. The TFT has a bottom-gate lightly doped offset (LDO) structure and has been designed for 5 V operation. Currents are measured at the low voltage and low temperature region. Using this result, the current-voltage characteristic relations of the TFT are obtained as a function of temperature. We suggest that combination of low I _on at the low voltage and low temperature region and the non-uniform characteristics of the TFT can cause memory cell data instabilities such as static hold failures.