Temperature dependent minority electron mobilities in strained si1-xgex (0. 2 < × < 0. 4) layers

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13 Citations (Scopus)


Temperature-dependent minority electron mobilities in p-type SiGe have been measured for the first time. Measurements were made on test npn SiGe/Si heterojunction bipolar transistors (HBT's) with pseudomorphic p-type Sii-a-Ge (0. 2 < x < 0. 4) base layers. Magnetotransport measurements were performed on the fabricated HBT's to obtain the minority electron mobilities in the heavily B-doped base layers for temperatures ranging from 5 to 300 K. The measured minority electron mobilities exhibited sharp increase with decreasing temperature, and also showed enhancement with decreasing base Ge composition. The cut-off frequency technique was also employed to estimate the room temperature minority electron mobilities of the alloys and the results confirmed the trend in mobilities with Ge composition as determined by the magnetotransport technique. Heterojunction bipolar transistor, minority carrier mobility, SiGe alloy.

Original languageEnglish
Pages (from-to)883-890
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2000
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received June 17, 1999; revised October 18, 1999. This work was supported by NASA-Glenn under Grant NAG3-1903 and by the Jet Propulsion Laboratory under Contract 961358. The review of this paper was arranged by Editor J. N. Hollenhorst. J.-S. Rieh and P. K. Bhattacharya are with the Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122 USA (e-mail: pkb@eecs.umich.edu). E. T. Croke is with HRL Laboratories, Malibu, CA 90265 USA. Publisher Item Identifier S 0018-9383(00)02735-0.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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