Temperature-dependent single-electron tunneling effect in lightly and heavily doped GaN nanowires

Jae Ryoung Kim, Byoung Kye Kim, I. J. Lee, Ju Jin Kim, Jinhee Kim, Seung Chul Lyu, Cheol Jin Lee

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


We studied the electrical transport properties of GaN nanowires with two different doping levels. Measurements taken at various temperatures demonstrate that the electrical transport depends mainly on the single-electron tunneling effect up to a relatively high temperature of ∼150 K. The aperiodic oscillations which we observed were attributed to single-electron tunneling through multiple quantum dots within the nanowire, which originated from various defects and the inhomogeneous distribution of the dopants.

Original languageEnglish
Article number233303
Pages (from-to)233303-1-233303-4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 2004 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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