Temperature-independent physical properties of electrophoretic Ti5NbO14 films for high-temperature capacitors

Mir Im; Woong Hee Lee; Sang Hyo Kweon; Jong Hyun Kim; Sahn Nahm

doi:10.1016/j.jeurceramsoc.2019.05.016

Temperature-independent physical properties of electrophoretic Ti₅NbO₁₄ films for high-temperature capacitors

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Jong Hyun Kim, Sahn Nahm^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ti₅NbO₁₄ (T5NO) films were developed on Pt/Ti/SiO₂/Si substrates by electrophoretic method by using T5NO³⁻ nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA⁺ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (ε_r) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the ε_r according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

Original language	English
Pages (from-to)	3730-3737
Number of pages	8
Journal	Journal of the European Ceramic Society
Volume	39
Issue number	13
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2019.05.016
Publication status	Published - 2019 Oct

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We also thank the KU–KIST graduate school program of Korea University.

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We also thank the KU–KIST graduate school program of Korea University.

Publisher Copyright:
© 2019 Elsevier Ltd

Keywords

2D metal-oxide nanosheets
Electrophoresis
High-temperature capacitors
Titanoniobates

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2019.05.016

Cite this

@article{a0d2d278297d43a6be783066c95c0572,

title = "Temperature-independent physical properties of electrophoretic Ti5NbO14 films for high-temperature capacitors",

abstract = "Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0\%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.",

keywords = "2D metal-oxide nanosheets, Electrophoresis, High-temperature capacitors, Titanoniobates",

author = "Mir Im and Lee, \{Woong Hee\} and Kweon, \{Sang Hyo\} and Kim, \{Jong Hyun\} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT \& Future Planning (2017R1A2B4007189). We also thank the KU–KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT \& Future Planning ( 2017R1A2B4007189 ). We also thank the KU–KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd",

year = "2019",

month = oct,

doi = "10.1016/j.jeurceramsoc.2019.05.016",

language = "English",

volume = "39",

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journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

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T1 - Temperature-independent physical properties of electrophoretic Ti5NbO14 films for high-temperature capacitors

AU - Im, Mir

AU - Lee, Woong Hee

AU - Kweon, Sang Hyo

AU - Kim, Jong Hyun

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We also thank the KU–KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We also thank the KU–KIST graduate school program of Korea University. Publisher Copyright: © 2019 Elsevier Ltd

PY - 2019/10

Y1 - 2019/10

N2 - Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

AB - Ti5NbO14 (T5NO) films were developed on Pt/Ti/SiO2/Si substrates by electrophoretic method by using T5NO3− nanosheets. The film deposited at room temperature (RT) contained organic defects, which were almost eliminated in the film annealed at 700 °C. The film deposited at RT revealed (100) planes with an inter-planar distance of 1.1 nm because of the existence of TBA+ defects. However, for the films annealed at higher temperatures (≥400 °C), two types of structures formed: (100) planes with 0.55 nm inter-planar distance (group-1 structure), and (100) planes with 1.42 nm inter-planar distance (group-2 structure). The dielectric constant (εr) of the film annealed at 700 °C was 61 with a low dielectric loss of 1.0%. Variations in the εr according to the film thickness, electric field, and temperature were small. This film displayed a high insulating property up to 300 °C with a small temperature coefficient of capacitance (−56.7 ppm/K) up to 400 °C.

KW - 2D metal-oxide nanosheets

KW - Electrophoresis

KW - High-temperature capacitors

KW - Titanoniobates

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