Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

Sangyeop Lee, Seonghoon Choi, Seul Ki Bac, Hakjoon Lee, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We used the Hall effect and magnetization measurements to investigate the temperature dependence of the magnetic anisotropy of a ferromagnetic semiconductor GaMnAs film grown on a (001) GaAs substrate. The Hall effect was systematically measured by applying an external magnetic field within and normal to the film plane. The switching behavior of the magnetization during the reversal process revealed the coexistence of in-plane and out-of-plane magnetic anisotropies in the film. However, these two types of magnetic anisotropies strongly depended on the temperature. Specifically, the out-of-plane anisotropy was dominant in the low-temperature region (i.e., 3–10 K), whereas the in-plane anisotropy became dominant in the temperature region higher than 15 K. This temperature dependent change in the magnetic anisotropy was further confirmed using direct magnetization measurements.

Original languageEnglish
Pages (from-to)7-11
Number of pages5
JournalSolid State Communications
Publication statusPublished - 2016 Oct 1

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning ( NRF-2014M3C1A8053744 ); by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2015R1D1A1A01056614 ); by Korea University through a grant; and by the National Science Foundation (Grant no. DMR14-00432 ).

Publisher Copyright:
© 2016 Elsevier Ltd


  • Ferromagnetic semiconductor
  • Magnetic anisotropy
  • Planar Hall Effect

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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