Temperature stress on pristine ZnO nanowire field effect transistor

Kyoungwon Kim; Pulak Chandra Debnath; Sangsig Kim; Sang Yeol Lee

doi:10.1063/1.3567795

Temperature stress on pristine ZnO nanowire field effect transistor

Kyoungwon Kim, Pulak Chandra Debnath, Sangsig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (Vth) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in Vth is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in Vth in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model.

Original language	English
Article number	113109
Journal	Applied Physics Letters
Volume	98
Issue number	11
DOIs	https://doi.org/10.1063/1.3567795
Publication status	Published - 2011 Mar 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Temperature stress on pristine ZnO nanowire field effect transistor",

abstract = "We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (Vth) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in Vth is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in Vth in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model.",

author = "Kyoungwon Kim and Debnath, {Pulak Chandra} and Sangsig Kim and Lee, {Sang Yeol}",

note = "Funding Information: This research was supported by a grant (Grant No. 2010K000384) from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science, and Technology, Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.",

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AU - Kim, Kyoungwon

AU - Debnath, Pulak Chandra

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This research was supported by a grant (Grant No. 2010K000384) from “Center for Nanostructured Materials Technology” under “21st Century Frontier R&D Programs” of the Ministry of Education, Science, and Technology, Korea, as well as by the System Integrated Semiconductor Base Technology Development Program funded from the Ministry of Knowledge and Economy (MKE), South Korea.

PY - 2011/3/14

Y1 - 2011/3/14

N2 - We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (Vth) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in Vth is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in Vth in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model.

AB - We have investigated the effect of the temperature dependency on the device stability of pristine ZnO nanowires (NWs) field effect transistor (FET). Pristine ZnO NW FET shows a large threshold voltage (Vth) shift by 6.5 V after increasing the measured temperature from 323 to 363 K. This large shift in Vth is mainly due to thermally activated process. Thermally activated electrons from the deep level trap site can be free carriers which results in the shift in Vth in negative direction. Also, activation energy of ZnO NW FET is derived to be about 1.432 eV based on thermally activated Arrhenius model.

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Temperature stress on pristine ZnO nanowire field effect transistor

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