In this article, a set of oscillators and a heterodyne image receiver operating near 600 GHz have been developed, each based on a 250-nm InP heterojunction bipolar transistor (HBT) technology and a 130-nm SiGe HBT technology, respectively. The oscillators are based on the common-base cross-coupled push-push topology, which employed coupled-line loads for improved output power and efficiency with a small area. The measured oscillation frequency ranges of the three oscillators with different coupled-line lengths were 628-682, 556-610, and 509-548 GHz, respectively, with a tuning capability achieved with bias variation. The maximum output power and the dc-to-RF efficiency achieved with the oscillators were -10 dBm and 0.19%, respectively. The heterodyne receiver, which consists of a mixer, an IF amplifier, and an IF detector, exhibited a maximum responsivity of 469 kV/W and a minimum noise equivalent power (NEP) of 0.64 pW/Hz1/2. A transmission-mode 3-D THz tomography imaging setup was established with one of the fabricated oscillators and the heterodyne receiver employed as the signal source and the image detector, respectively. With the imaging setup, a successful reconstruction of 3-D images of a target object was demonstrated based on the filtered back-projection algorithm.
|Number of pages||14|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 2021 May|
Bibliographical noteFunding Information:
Manuscript received October 24, 2020; revised January 5, 2021; accepted February 2, 2021. Date of publication March 12, 2021; date of current version May 5, 2021. This work was supported by the Institute of Information & Communications Technology Planning & Evaluation (IITP) Grant funded by the Korea Government (MSIT) under Grant 2016-0-00185. (Corresponding author: Jae-Sung Rieh.) Jungsoo Kim, Heekang Son, Doyoon Kim, Junghwan Yoo, and Jae-Sung Rieh are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: firstname.lastname@example.org; email@example.com; firstname.lastname@example.org; email@example.com; firstname.lastname@example.org).
© 1963-2012 IEEE.
- Computed tomography (CT)
- heterojunction bipolar transistors (HBTs)
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering