Texture development and magnetoresistance properties of CoFeBMgOCoFeB -based magnetic tunnel junction depending on capping layer crystallinity

Ha Chang Chung, Seong Rae Lee

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7 Citations (Scopus)

Abstract

We investigated the effects of the crystallinity of the capping layer materials on the crystallization of amorphous top CoFeB (t-CoFeB) and the magnetoresistance properties and temperature sensitivities of the magnetic tunnel junctions (MTJs). When a (002)-textured hcp Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (110) during annealing. Using the CoFe (110)/Ru (002) texture relation is the best way to reduce the lattice mismatch down to 5.6%. However, when a polycrystalline TiAl (two phase: amorphous and fine polycrystalline) or amorphous ZrAl capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe (002) during annealing due to the MgO (001) template effect. The tunneling magneto resistance ratios of the annealed MTJs capped with Ru, TiAl, and ZrAl were 46.7%, 71.8%, and 72.7%, respectively, which depended on the texture and the epitaxiality of t-CoFeBMgO (001). Consequently, the texture evolution of the amorphous t-CoFeB during annealing can be controlled by adjusting the crystallinity of the adjacent capping layer which, in turn, affects the magnetoresistance properties and temperature sensitivities of the MTJs.

Original languageEnglish
Article number07A914
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by the KRF Grant (KRF-2004-005-C00068), the Basic Research Program of the KOSEF (R-01-2005-000-11188-0), and a grant from the Fundamental R&D Program for Core Technology of Materials by the MCIE.

ASJC Scopus subject areas

  • General Physics and Astronomy

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