The characteristics of joints with Indium-silver alloy using diffusion soldering method

Je Yoon Kim; Sang Won Park; Jee Young Yoon; Hwa Young Kim; Dae Yeon Lee; Gyu Tae Kim; Man Young Sung; Ey Goo Kang

doi:10.1557/proc-817-l6.36

The characteristics of joints with Indium-silver alloy using diffusion soldering method

Je Yoon Kim, Sang Won Park, Jee Young Yoon, Hwa Young Kim, Dae Yeon Lee, Gyu Tae Kim, Man Young Sung, Ey Goo Kang

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (1441°C) <AgIn₂ (166°C) < (300 °C) < (670°C) < (695°C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700 °C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays), From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.

Original language	English
Pages (from-to)	261-266
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	817
DOIs	https://doi.org/10.1557/proc-817-l6.36
Publication status	Published - 2004
Event	New Materials for Microphotonics - San Francisco, CA, United States Duration: 2004 Apr 13 → 2004 Apr 15

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "The characteristics of joints with Indium-silver alloy using diffusion soldering method",

abstract = "Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (1441°C) <AgIn2 (166°C) < (300 °C) < (670°C) < (695°C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700 °C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays), From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.",

author = "Kim, {Je Yoon} and Park, {Sang Won} and Yoon, {Jee Young} and Kim, {Hwa Young} and Lee, {Dae Yeon} and Kim, {Gyu Tae} and Sung, {Man Young} and Kang, {Ey Goo}",

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AU - Kim, Je Yoon

AU - Park, Sang Won

AU - Yoon, Jee Young

AU - Kim, Hwa Young

AU - Lee, Dae Yeon

AU - Kim, Gyu Tae

AU - Sung, Man Young

AU - Kang, Ey Goo

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N2 - Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (1441°C) <AgIn2 (166°C) < (300 °C) < (670°C) < (695°C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700 °C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays), From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.

AB - Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (1441°C) <AgIn2 (166°C) < (300 °C) < (670°C) < (695°C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700 °C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays), From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.

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The characteristics of joints with Indium-silver alloy using diffusion soldering method

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