The characteristics of kink effect suppressed thin film transistor by using symmetric dual-gate

Man Young Sung, Ey Goo Kang, Dae Yeon Lee, Jang Woo Ryu

Research output: Contribution to journalArticlepeer-review


In this paper, a symmetric dual-gate single-Si thin film transistor (TFT), which includes three split floating n+ zones, is simulated. This structure drastically reduces the kink-effect and improves the on-current. This is due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region. This structure allows effective reduction in the kink-effect, depending on the length of the two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA, while that of the conventional dual-gate structure is 0.5 mA, at both 12 V drain and 7 V gate voltages. This result shows an 80% enhancement in on-current. In addition, the reduction of electric field in the channel region compared to a conventional single-gate TFT and the reduction of the output conductance in the saturation region, is observed. In addition, the reduction in hole concentration, in the channel region, in order for effectively reducing the kink-effect, is also confirmed.

Original languageEnglish
Pages (from-to)3943-3948
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 2006 May 9


  • Dual gate TFT
  • Floating n+ zone
  • Kink effect
  • On current
  • Symmetric dual gate
  • TFT

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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