@inproceedings{ae29bd6aa64d4b559c9275a4f1ee64cd,
title = "The effect of a shielding layer on breakdown voltage in a trench gate IGBT",
abstract = "In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ Shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.",
author = "Lee, {Jong Seok} and Shin, {Ho Hyun} and Lee, {Han Sin} and Sung, {Man Young} and Kang, {Ey Goo}",
year = "2007",
doi = "10.1109/ICPE.2007.4692349",
language = "English",
isbn = "9781424418725",
series = "7th Internatonal Conference on Power Electronics, ICPE'07",
publisher = "IEEE Computer Society",
pages = "62--65",
booktitle = "7th Internatonal Conference on Power Electronics, ICPE'07",
note = "7th Internatonal Conference on Power Electronics, ICPE'07 ; Conference date: 22-10-2007 Through 26-10-2007",
}