Abstract
In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ Shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.
| Original language | English |
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| Title of host publication | 7th Internatonal Conference on Power Electronics, ICPE'07 |
| Publisher | IEEE Computer Society |
| Pages | 62-65 |
| Number of pages | 4 |
| ISBN (Print) | 9781424418725 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | 7th Internatonal Conference on Power Electronics, ICPE'07 - Daegu, Korea, Republic of Duration: 2007 Oct 22 → 2007 Oct 26 |
Publication series
| Name | 7th Internatonal Conference on Power Electronics, ICPE'07 |
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Other
| Other | 7th Internatonal Conference on Power Electronics, ICPE'07 |
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| Country/Territory | Korea, Republic of |
| City | Daegu |
| Period | 07/10/22 → 07/10/26 |
ASJC Scopus subject areas
- Energy Engineering and Power Technology