The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae; J. H. Kwon; S. Chang; M. H. Chung; T. Y. Oh; J. H. Park; S. Y. Lee; B. K. Ju

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae, J. H. Kwon, S. Chang, M. H. Chung, T. Y. Oh, J. H. Park, S. Y. Lee, B. K. Ju

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (R_c) by using transmission line method (TLM) and atomic force microscope (AFM).

Original language	English
Pages	1831-1832
Number of pages	2
Publication status	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11

Other

Other	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	09/12/9 → 09/12/11

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

@conference{7b3a1581faea470da947662992422220,

title = "The effect of annealing on amorphous indium gallium zinc oxide thin film transistors",

abstract = "This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).",

author = "Bae, {H. S.} and Kwon, {J. H.} and S. Chang and Chung, {M. H.} and Oh, {T. Y.} and Park, {J. H.} and Lee, {S. Y.} and Ju, {B. K.}",

year = "2009",

language = "English",

pages = "1831--1832",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

TY - CONF

T1 - The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

AU - Bae, H. S.

AU - Kwon, J. H.

AU - Chang, S.

AU - Chung, M. H.

AU - Oh, T. Y.

AU - Park, J. H.

AU - Lee, S. Y.

AU - Ju, B. K.

PY - 2009

Y1 - 2009

N2 - This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

AB - This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

UR - http://www.scopus.com/inward/record.url?scp=77954156743&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954156743

SP - 1831

EP - 1832

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Abstract

Other

ASJC Scopus subject areas

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