The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae; J. H. Kwon; S. Chang; M. H. Chung; T. Y. Oh; J. H. Park; S. Y. Lee; B. K. Ju

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae
, J. H. Kwon
, S. Chang
, M. H. Chung
, T. Y. Oh
, J. H. Park
, S. Y. Lee
, B. K. Ju

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (R_c) by using transmission line method (TLM) and atomic force microscope (AFM).

Original language	English
Pages	1831-1832
Number of pages	2
Publication status	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11

Other

Other	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	09/12/9 → 09/12/11

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

@conference{7b3a1581faea470da947662992422220,

title = "The effect of annealing on amorphous indium gallium zinc oxide thin film transistors",

abstract = "This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).",

author = "Bae, \{H. S.\} and Kwon, \{J. H.\} and S. Chang and Chung, \{M. H.\} and Oh, \{T. Y.\} and Park, \{J. H.\} and Lee, \{S. Y.\} and Ju, \{B. K.\}",

year = "2009",

language = "English",

pages = "1831--1832",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

TY - CONF

T1 - The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

AU - Bae, H. S.

AU - Kwon, J. H.

AU - Chang, S.

AU - Chung, M. H.

AU - Oh, T. Y.

AU - Park, J. H.

AU - Lee, S. Y.

AU - Ju, B. K.

PY - 2009

Y1 - 2009

N2 - This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

AB - This paper presents the post annealing effects, caused by rapid thermal annealing (RTA), on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT) 's electrical characteristics, and analyzed its contact resistance (Rc) by using transmission line method (TLM) and atomic force microscope (AFM).

UR - https://www.scopus.com/pages/publications/77954156743

M3 - Paper

AN - SCOPUS:77954156743

SP - 1831

EP - 1832

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

Abstract

Other

ASJC Scopus subject areas

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