Skip to main navigation
Skip to search
Skip to main content
Korea University Pure Home
Home
Profiles
Research units
Equipment
Research output
Press/Media
Search by expertise, name or affiliation
The effect of annealing on amorphous indium gallium zinc oxide thin film transistors
H. S. Bae
, J. H. Kwon
, S. Chang
, M. H. Chung
, T. Y. Oh
,
J. H. Park
, S. Y. Lee
,
B. K. Ju
Research output
:
Contribution to conference
›
Paper
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'The effect of annealing on amorphous indium gallium zinc oxide thin film transistors'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Oxide Thin-film Transistors
100%
Zinc Oxide Thin Films
100%
Amorphous InGaZnO (a-IGZO)
100%
Annealing Effect
100%
Electrical Characteristics
50%
Post-annealing
50%
Rapid Thermal Annealing
50%
Atomic Force Microscope
50%
Contact Resistance
50%
Transmission Line Method
50%
Material Science
Zinc Oxide
100%
Annealing
100%
Thin-Film Transistor
100%
Gallium
100%
Indium
100%
Electrical Property
50%
Contact Resistance
50%
Engineering
Thin-Film Transistor
100%
Rapid Thermal Annealing
50%
Atomic Force Microscope
50%
Electric Lines
50%
Line Method
50%
Annealing Effect
50%
Chemical Engineering
Indium
100%
Film
100%
Zinc Oxide
100%