The effect of annealing on amorphous indium gallium zinc oxide thin film transistors

H. S. Bae, J. H. Kwon, S. Chang, M. H. Chung, T. Y. Oh, J. H. Park, S. Y. Lee, B. K. Ju

    Research output: Contribution to conference › Paper › peer-review

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    Material Science

    Engineering

    Chemical Engineering