The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

Sunjae Chung, H. C. Kim, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

Original languageEnglish
Pages (from-to)1739-1742
Number of pages4
JournalSolid State Communications
Volume149
Issue number41-42
DOIs
Publication statusPublished - 2009 Nov

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program; and by the National Science Foundation Grant DMR06-03762.

Keywords

  • A. Ferromagnetism
  • A. Semiconductor
  • D. Anisotropy
  • E. Planar Hall effect

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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