The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

Sunjae Chung; H. C. Kim; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1016/j.ssc.2009.07.024

The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

Sunjae Chung, H. C. Kim, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

Original language	English
Pages (from-to)	1739-1742
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	41-42
DOIs	https://doi.org/10.1016/j.ssc.2009.07.024
Publication status	Published - 2009 Nov

Keywords

A. Ferromagnetism
A. Semiconductor
D. Anisotropy
E. Planar Hall effect

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2009.07.024

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title = "The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As",

abstract = "Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1,{\= }) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.",

keywords = "A. Ferromagnetism, A. Semiconductor, D. Anisotropy, E. Planar Hall effect",

author = "Sunjae Chung and Kim, {H. C.} and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program; and by the National Science Foundation Grant DMR06-03762.",

year = "2009",

month = nov,

doi = "10.1016/j.ssc.2009.07.024",

language = "English",

volume = "149",

pages = "1739--1742",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "41-42",

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T1 - The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

AU - Chung, Sunjae

AU - Kim, H. C.

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071795); by the Seoul R&DB Program; and by the National Science Foundation Grant DMR06-03762.

PY - 2009/11

Y1 - 2009/11

N2 - Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

AB - Planar Hall effect (PHE) measurements are used to investigate magnetic anisotropy in two (Ga, Mn)As samples which differ by the hole concentration, but are otherwise identical. The difference in the hole density is controlled via modulation doping by Be. Angular dependence of PHE measured at 13 K reveals that the uniaxial easy axis in the sample with a lower hole concentration lies along the [110] direction, and along [over(1, ̄) 10] in the sample with higher doping. This difference in the orientation of uniaxial easy axes in the two samples demonstrates that the magnetization of GaMnAs can be manipulated just by varying the carrier density.

KW - A. Ferromagnetism

KW - A. Semiconductor

KW - D. Anisotropy

KW - E. Planar Hall effect

UR - http://www.scopus.com/inward/record.url?scp=69849100695&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2009.07.024

DO - 10.1016/j.ssc.2009.07.024

M3 - Article

AN - SCOPUS:69849100695

SN - 0038-1098

VL - 149

SP - 1739

EP - 1742

JO - Solid State Communications

JF - Solid State Communications

IS - 41-42

ER -

The effect of carrier density on magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn)As

Abstract

Keywords

ASJC Scopus subject areas

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