The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Y. J. Park; K. H. Kim; Y. H. Na; T. R. Jung; S. U. Kim

The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Y. J. Park, K. H. Kim, Y. H. Na, T. R. Jung, S. U. Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resisitivity (5 × 10⁹ ω ̇cm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl : 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350 - 500 °C. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.

Original language	English
Pages (from-to)	4425-4427
Number of pages	3
Journal	IEEE Nuclear Science Symposium Conference Record
Volume	7
Publication status	Published - 2004
Externally published	Yes
Event	2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy Duration: 2004 Oct 16 → 2004 Oct 22

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Cite this

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title = "The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film",

abstract = "Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resisitivity (5 × 109 ω{\. }cm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl : 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350 - 500 °C. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.",

author = "Park, {Y. J.} and Kim, {K. H.} and Na, {Y. H.} and Jung, {T. R.} and Kim, {S. U.}",

year = "2004",

language = "English",

volume = "7",

pages = "4425--4427",

journal = "IEEE Nuclear Science Symposium Conference Record",

issn = "1095-7863",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors ; Conference date: 16-10-2004 Through 22-10-2004",

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TY - JOUR

T1 - The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

AU - Park, Y. J.

AU - Kim, K. H.

AU - Na, Y. H.

AU - Jung, T. R.

AU - Kim, S. U.

PY - 2004

Y1 - 2004

N2 - Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resisitivity (5 × 109 ω ̇cm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl : 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350 - 500 °C. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.

AB - Polycrystalline CdZnTe thick films were grown by thermal evaporation method using CdZnTe and CdZnTe:Cl source. We obtained polycrystalline CdZnTe thick films having high resisitivity (5 × 109 ω ̇cm) similar that of single crystals. Cl-doped polycrystalline CdZnTe thick films(Cl : 100, 200, 300, 400 ppm) were prepared on polished graphite substrate keeping substrate temperature between 350 - 500 °C. The average grain size and resistivity are similar each other. This paper present the effect of Cl-doping on the resistivity of polycrystalline CdZnTe thick films.

UR - http://www.scopus.com/inward/record.url?scp=23844556827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844556827&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23844556827

SN - 1095-7863

VL - 7

SP - 4425

EP - 4427

JO - IEEE Nuclear Science Symposium Conference Record

JF - IEEE Nuclear Science Symposium Conference Record

T2 - 2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors

Y2 - 16 October 2004 through 22 October 2004

ER -

The effect of Cl-doping concentration on the resistivity of polycrystalline CdZnTe:Cl thick film

Abstract

ASJC Scopus subject areas

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