Abstract
We demonstrate the effect of the thermal annealing temperature (250 and 300°C) on the performance (photosensitivity and temporal photoresponse) of an amorphous indium-gallium-zinc-oxide (α-IGZO) photodetector based on the TFT structure to visible radiation. Analysis of photosensitivity was performed to assess various sensing parameters, such as photoresponsivity (Rph), threshold voltage (VTH) shift, and subthreshold swing (SS). The photosensitivity was improved as the wavelength of light decreased and the annealing temperature increased. This was analyzed based on the activation energy for the ionization of an oxygen vacancy (Vo) and the concentration of Vo in relation to the thermal annealing condition. The temporal photoresponse of the α-IGZO device are also presented. The photoresponse times improved as the annealing temperature increased, which was due to the increase in the concentration of Vo functioning as a generation and recombination center with increasing annealing temperature.
Original language | English |
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Pages (from-to) | 11745-11749 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 16 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2016 |
Bibliographical note
Funding Information:This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2015M3A7B7045496) and by the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean government Ministry of Trade, Industry and Energy.
Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.
Keywords
- Amorphous IGZO
- Oxygen vacancy
- Photodetector
- Thermal annealing
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics