The effect of substrate surface morphology on GaN by MOCVD

Engineering

• Atomic Force Microscopy 100%
• Buffer Layer 33%
• Chemical Vapor Deposition 33%
• Crystal Quality 33%
• Defect Density 66%
• Emitting Laser 33%
• Energy Engineering 33%
• Lateral Growth 33%
• Light-Emitting Diode 33%
• Nitride Layer 33%
• Optimum Condition 66%
• Sapphire Substrate 33%
• Sapphire Surface 33%
• Smooth Surface 33%
• Substrate Surface 100%
• Surface Morphology 100%
• Vapor Deposition 33%

Material Science

• Buffer Layer 33%
• Chemical Vapor Deposition 33%
• Defect Density 66%
• Film 66%
• Film Growth 33%
• Laser Diode 33%
• Light-Emitting Diode 33%
• Microscopy 33%
• Nitriding 100%
• Optical Property 33%
• Sapphire 100%
• Surface Morphology 100%

Keyphrases

• Property Use 33%