The effect of thermally induced stress on device temperature measurements by Raman spectroscopy

Jihyun Kim; J. A. Freitas; P. B. Klein; S. Jang; F. Ren; S. J. Pearton

doi:10.1149/1.2103527

The effect of thermally induced stress on device temperature measurements by Raman spectroscopy

Jihyun Kim, J. A. Freitas, P. B. Klein, S. Jang, F. Ren, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of stress on the measured temperatures of a GaN Schottky diode is studied using micro-Raman scattering under passive and active heating. Our experiment shows that each specifie heteroepitaxial structure should be calibrated independently under passive heating conditions in order to minimize significant errors in the measurement of device temperature. This error is introduced by differences in biaxial strain (resulting from differences in lattice mismatch, thermal expansion coefficient, and relaxation) between the structure under investigation and that employed for calibration. Measurements of the operating temperature of a GaN Schottky diode indicated that a large error in temperature can result from the use of a temperature calibration from a different structure.

Original language	English
Pages (from-to)	G345-G347
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/1.2103527
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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AU - Kim, Jihyun

AU - Freitas, J. A.

AU - Klein, P. B.

AU - Jang, S.

AU - Ren, F.

AU - Pearton, S. J.

PY - 2005

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N2 - The effect of stress on the measured temperatures of a GaN Schottky diode is studied using micro-Raman scattering under passive and active heating. Our experiment shows that each specifie heteroepitaxial structure should be calibrated independently under passive heating conditions in order to minimize significant errors in the measurement of device temperature. This error is introduced by differences in biaxial strain (resulting from differences in lattice mismatch, thermal expansion coefficient, and relaxation) between the structure under investigation and that employed for calibration. Measurements of the operating temperature of a GaN Schottky diode indicated that a large error in temperature can result from the use of a temperature calibration from a different structure.

AB - The effect of stress on the measured temperatures of a GaN Schottky diode is studied using micro-Raman scattering under passive and active heating. Our experiment shows that each specifie heteroepitaxial structure should be calibrated independently under passive heating conditions in order to minimize significant errors in the measurement of device temperature. This error is introduced by differences in biaxial strain (resulting from differences in lattice mismatch, thermal expansion coefficient, and relaxation) between the structure under investigation and that employed for calibration. Measurements of the operating temperature of a GaN Schottky diode indicated that a large error in temperature can result from the use of a temperature calibration from a different structure.

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The effect of thermally induced stress on device temperature measurements by Raman spectroscopy

Abstract

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