We report the characteristics of Sn-doped In 2 O 3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.
Bibliographical noteFunding Information:
This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20163010012200) and received partial support from the Technology Innovation Program (or Industrial Strategic Technology Development Program (10079601) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea).
© 2018 Elsevier B.V.
- Cylindrical rotating magnetron sputtering
- Preferred orientation
- Sn-doped In O
- Transparent conducting electrodes
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Surfaces and Interfaces