The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim; Young Ju Park; Dongjin Byun; Eun Kyu Kim; Eui Kwan Koh; Il Woo Park

The effects of H₂/N₂ mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Jaekyun Kim^*
, Young Ju Park
, Dongjin Byun
, Eun Kyu Kim
, Eui Kwan Koh
, Il Woo Park

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H₂/N₂ mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

Original language	English
Pages (from-to)	S446-S449
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

Keywords

GaN
H/N mixed gas plasma
Oxygen-deficient thin layer

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{cebac1f5444a4628b24438081f29ab3c,

title = "The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers",

abstract = "The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.",

keywords = "GaN, H/N mixed gas plasma, Oxygen-deficient thin layer",

author = "Jaekyun Kim and Park, \{Young Ju\} and Dongjin Byun and Kim, \{Eun Kyu\} and Koh, \{Eui Kwan\} and Park, \{Il Woo\}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S446--S449",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - The effects of H2/N2 mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

AU - Kim, Jaekyun

AU - Park, Young Ju

AU - Byun, Dongjin

AU - Kim, Eun Kyu

AU - Koh, Eui Kwan

AU - Park, Il Woo

PY - 2003/2

Y1 - 2003/2

N2 - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

AB - The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H2/N2 mixed gas-plasma at 350 °C for 30 min with fixed 50 W plasma power from which an about 2 nm thick oxygen-deficient layer was obtained. GaN epilayer of about 4.5 μm thick were grown using a metal organic chemical vapor deposition (MOCVD) system. X-ray rocking curves and cathodoluminescence spectra of the GaN epilayers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers.

KW - GaN

KW - H/N mixed gas plasma

KW - Oxygen-deficient thin layer

UR - https://www.scopus.com/pages/publications/0037307697

M3 - Conference article

AN - SCOPUS:0037307697

SN - 0374-4884

VL - 42

SP - S446-S449

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

The effects of H₂/N₂ mixed gas-plasma pretreatment of sapphire (0001) surface on the characteristics of GaN epilayers

Abstract

Keywords

ASJC Scopus subject areas

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