@inproceedings{545b0754516d4556952a06080ef18ac8,
title = "The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors",
abstract = "We have investigated the effect of proton irradiation on reliability of InAlN/GaN high electron mobility transistors (HEMTs). Devices were subjected to 5-15 MeV proton irradiations with a fixed dose of 5 × 1015 cm-2, or to a different doses of 2 × 1011, 5 × 1013 or 2 × 1015 cm-2 of protons at a fixed energy of 5 MeV. During off-state electrical stressing, the typical critical voltage for un-irradiated devices was 45 to 55 V. By sharp contrast, no critical voltage was detected for proton irradiated HEMTs up to 100 V, which was instrument-limited. After electrical stressing, no degradation was observed for the drain or gate current-voltage characteristics of the proton-irradiated HEMTs. However, the drain current decreased ∼12%, and the reverse bias gate leakage current increased more than two orders of magnitude for unirradiated HEMTs as a result of electrical stressing.",
author = "L. Liu and Lo, {C. F.} and Xi, {Y. Y.} and Wang, {Y. X.} and Kim, {H. Y.} and J. Kim and Pearton, {S. J.} and O. Laboutin and Y. Cao and Johnson, {J. W.} and Kravchenko, {I. I.} and F. Ren",
year = "2013",
doi = "10.1117/12.2007287",
language = "English",
isbn = "9780819493941",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VIII",
note = "SPIE Symposium on Gallium Nitride Materials and Devices VIII ; Conference date: 04-02-2013 Through 07-02-2013",
}