Abstract
The authors report on the electrical and photoconductivity characteristics of donor-acceptor alternating copolymer, poly(dioctyloxinapthalenediketopyrrolopyrrole) (PONDPP) with Al/PONDPP/p-Si/Al hybrid organic/inorganic Schottky diode for optoelectronic applications. The fabricated device shows ideality factor value of 2.6 and barrier height of 0.68eV obtained from current-voltage characteristics. The high rectification ratio of 1.86×104 and photo-responsivity of 55mA/W at 650nm is achieved. From results, we found that the fine photo-response and electrical characteristics are attributed to the modified band-gap structure to have Schottky barrier at highest occupied molecular orbital to valence band of silicon and high hole mobility of PONDPP.
| Original language | English |
|---|---|
| Article number | 243301 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2012 Dec 10 |
Bibliographical note
Funding Information:This work was supported by the IT R&D Program (No. 2008-F-024-02, Development of Mobile Flexible IOP Platform) of MKE in Korea. This research was financially supported by the National Research Foundation of Korea (Grant by the Korean Government (No. 2012047047)) and the Industrial-Educational Cooperation Program between Korea University and Samsung Electronics. We thank the staff of KBSI for technical assistance.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)