TY - GEN
T1 - The electrical characteristics of high density arrays of silicon nanowire field-effect transistors
T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
AU - Kim, Hye Young
AU - Lee, Kangho
AU - Lee, Jae Woo
AU - Kim, Sangwook
AU - Kim, Gyu Tae
AU - Duesberg, Georg S.
PY - 2013
Y1 - 2013
N2 - Since the introduction of silicon nanowire field-effect transistors (SiNW FETs) as a new technology for highly integrated circuits, their scaling behavior has been of crucial importance for the continuation of Moore's law. To date most studies have been of a theoretical nature, as small wire spacing is difficult to achieve experimentally. Here we successfully fabricated and investigated arrays of sub 20 nm SiNW FETs with wire spacing as small as 30 nm for the first time. The channels are contacted using global buried Si electrodes. Using the wafer as the back gate an investigation of the electrical performance of an array of SiNW FETs was undertaken. These experimental observations are supported by simulations using FlexPED.
AB - Since the introduction of silicon nanowire field-effect transistors (SiNW FETs) as a new technology for highly integrated circuits, their scaling behavior has been of crucial importance for the continuation of Moore's law. To date most studies have been of a theoretical nature, as small wire spacing is difficult to achieve experimentally. Here we successfully fabricated and investigated arrays of sub 20 nm SiNW FETs with wire spacing as small as 30 nm for the first time. The channels are contacted using global buried Si electrodes. Using the wafer as the back gate an investigation of the electrical performance of an array of SiNW FETs was undertaken. These experimental observations are supported by simulations using FlexPED.
UR - http://www.scopus.com/inward/record.url?scp=84894212208&partnerID=8YFLogxK
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U2 - 10.1109/NANO.2013.6720834
DO - 10.1109/NANO.2013.6720834
M3 - Conference contribution
AN - SCOPUS:84894212208
SN - 9781479906758
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 384
EP - 388
BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Y2 - 5 August 2013 through 8 August 2013
ER -