The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

Hye Young Kim; Kangho Lee; Jae Woo Lee; Sangwook Kim; Gyu Tae Kim; Georg S. Duesberg

doi:10.1109/NANO.2013.6720834

The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

Hye Young Kim
, Kangho Lee
, Jae Woo Lee
, Sangwook Kim
, Gyu Tae Kim
, Georg S. Duesberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Since the introduction of silicon nanowire field-effect transistors (SiNW FETs) as a new technology for highly integrated circuits, their scaling behavior has been of crucial importance for the continuation of Moore's law. To date most studies have been of a theoretical nature, as small wire spacing is difficult to achieve experimentally. Here we successfully fabricated and investigated arrays of sub 20 nm SiNW FETs with wire spacing as small as 30 nm for the first time. The channels are contacted using global buried Si electrodes. Using the wafer as the back gate an investigation of the electrical performance of an array of SiNW FETs was undertaken. These experimental observations are supported by simulations using FlexPED.

Original language	English
Title of host publication	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages	384-388
Number of pages	5
DOIs	https://doi.org/10.1109/NANO.2013.6720834
Publication status	Published - 2013
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 2013 Aug 5 → 2013 Aug 8

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	13/8/5 → 13/8/8

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2013.6720834

Cite this

Kim, H. Y., Lee, K., Lee, J. W., Kim, S., Kim, G. T., & Duesberg, G. S. (2013). The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 384-388). Article 6720834 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720834

The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing. / Kim, Hye Young; Lee, Kangho; Lee, Jae Woo et al.
2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 384-388 6720834 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, HY, Lee, K, Lee, JW, Kim, S, Kim, GT & Duesberg, GS 2013, The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720834, Proceedings of the IEEE Conference on Nanotechnology, pp. 384-388, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13/8/5. https://doi.org/10.1109/NANO.2013.6720834

Kim HY, Lee K, Lee JW, Kim S, Kim GT, Duesberg GS. The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 384-388. 6720834. (Proceedings of the IEEE Conference on Nanotechnology). doi: 10.1109/NANO.2013.6720834

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The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

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