The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Michael Kneissl, Tae Yeon Seong, Jung Han, Hiroshi Amano

Research output: Contribution to journalReview articlepeer-review

842 Citations (Scopus)


By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation.

Original languageEnglish
Pages (from-to)233-244
Number of pages12
JournalNature Photonics
Issue number4
Publication statusPublished - 2019 Apr 1

Bibliographical note

Funding Information:
T.-Y.S and H.A. gratefully acknowledge financial support from the National Research Foundation of Korea funded by the Ministry of Science and ICT (Global Research Laboratory programme: NRF-2017K1A1A2013160). M.K. gratefully acknowledges support by the German Research Foundation (DFG) within the Collaborative Research Centre ‘Semiconductor Nanophotonics’ (CRC 787) as well as funding by the Federal Ministry of Education and Research (BMBF) of Germany within the ‘Zwanzig20’ initiative ‘Advanced UV for Life’.

Publisher Copyright:
© 2019, Springer Nature Limited.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics


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