Abstract
We fabricated a free-standing structure of a GaN nanowire by selectively etching Si3N4, previously grown on a SiO2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes.
Original language | English |
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Pages (from-to) | 245-247 |
Number of pages | 3 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 81 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2005 Jul |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)