The fabrication technique and electrical properties of a free-standing GaN nanowire

H. Y. Yu, B. H. Kang, C. W. Park, U. H. Pi, C. J. Lee, S. Y. Choi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We fabricated a free-standing structure of a GaN nanowire by selectively etching Si3N4, previously grown on a SiO2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes.

Original languageEnglish
Pages (from-to)245-247
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Issue number2
Publication statusPublished - 2005 Jul
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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